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GP1S39J0000F
GP1S39J0000F
Gap : 1.5mm, Detector pitch : 1mm 2-phase Phototransistor Output, Compact Transmissive Photointerrupter
Description
GP1S39J0000F is a compact-package, phototransistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides noncontact sensing. The compact package series is a result of unique technology combing transfer and injection molding. This is a 2-phase output device, suitable for detection of rotational/linear speed and direction.
Agency approvals/Compliance
1. Compliant with RoHS directive
Applications
1. Detection of object presence or motion. 2. Example : printer, lens control for camera
Features
1. Transmissive with phototransistor output 2. Highlights : * Compact Size * 2-phase output device 3. Key Parameters : * Gap Width : 1.5mm * Detector pitch : 1mm (Detecting pitch : TYP. 0.6mm) * Package : 4.5x4x3.5mm 4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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Sheet No.: D3-A01301EN Date Oct. 3. 2005 (c) SHARP Corporation
GP1S39J0000F
Internal Connection Diagram
Top view
3
PT2
2
1 2 3 4
4 4
PT1
5
1
5
Anode Cathode Emitter 2 Emitter 1 Collector
Outline Dimensions
Top view
a b b 4.5 1.5 Center of light path (0.7) 1.5 1.5 (C0.4) 4
(Unit : mm)
a
SHARP mark "S"
3.5
Date code
4.7 1.27 b-b' selection (0.8) 4MIN.
(0.7)
(C0.3) 0.15 +0.2 -0.1 3.14
5 1
Residual gate (2)
0.4 1.27
a-a' selection (1)
4 3 2
(0.37)
(0.37)
* Unspecified tolerance : 0.2mm * Dimensions in parenthesis are shown for reference. * The dimensions indicated by *refer to those measured from the lead base. * The dimensions shown do not include those of burrs. Burr's dimensions : 0.15mm MAX. Residual gate : 0.3mm MAX. portion has little thickness of outer molding, * Since the inner devices shall be appeared.
Product mass : approx. 0.1g Plating material : SnCu (Cu : TYP. 2%)
Sheet No.: D3-A01301EN
2
GP1S39J0000F
Date code (2 digit)
1st digit Year of production A.D. Mark 2000 0 2001 1 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 2010 0 : : 2nd digit Month of production Month Mark 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 X 11 Y 12 Z
repeats in a 10 year cycle
Rank mark
There is no rank indicator.
Country of origin
Japan
Sheet No.: D3-A01301EN
3
GP1S39J0000F
Absolute Maximum Ratings
Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Symbol Rating IF 50 VR 6 P 75 VCE1O 35 VCE2O VE1CO 6 VE2CO IC 20 75 PC 100 Ptot Topr -25 to +85 Tstg -40 to +100 Tsol 260
Input
(Ta=25C) Unit mA V mW V V mA mW mW C C C
1mm or more Soldering area
Output Emitter-collector voltage
Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature 1 Soldering temperature
1 For 5s or less
Electro-optical Characteristics
Parameter Forward voltage Input Reverse current 2 Output Collector dark current Collector current 2 Transfer Collector current ratio charac- Collector-emitter saturation voltage Rise time teristics Response time Fall time
Symbol VF IR ICEO IC IC1/IC2 VCE(sat) tr tf
Condition IF=20mA VR=3V VCE=20V VCE=5V, IF=4mA VCE=5V, IF=4mA IF=8mA, IC=50A VCE=5V, IC=100A, RL=1k
MIN. - - - 130 0.67 - - -
TYP. 1.2 - - - - - 50 50
(Ta=25C) MAX. Unit 1.4 V 10 A 100 nA 520 A 1.5 - 0.4 V 150 s 150 s
2 Output and Transfer characteristics are common to both phototransistors
Sheet No.: D3-A01301EN
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GP1S39J0000F
Fig.1 Forward Current vs. Ambient Temperature
60 50
Fig.2 Power Dissipation vs. Ambient Temperature
120 100 Power dissipation P (mW) 80 75 60 40 20 15 Ptot
Forward current IF (mA)
40 30 20 10 0 -25
P, Pc
0
25
50
75 85
100
0 -25
0
25
50
75 85
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig.3 Forward Current vs. Forward Voltage
Fig.4 Collector Current vs. Forward Current
1 Collector current IC (mA) VCE=5V Ta=25C
Ta=75C 50C Forward current IF (mA) 100
25C 0C -25C
0.8
0.6 0.4
10
0.2 1 0 0.5 1 1.5 2 2.5 3 Forward voltage VF (V)
0 0 5 Forward current IF (mA) 10
Fig.5 Collector Current vs. Collector-emitter Voltage
5 Collector current IC (mA) Ta=25C
Fig.6 Relative Collector Current vs. Ambient Temperature
400 VCE=5V IF=4mA
4
IF=50mA 40mA 30mA
3
Collector current IC (A) 10
300
200
2
20mA 10mA 4mA
100
1 0 0 2 4 6
8
0 -25
0
25
50
75 85
Collector-emitter voltage VCE (V)
Ambient temperature Ta (C)
Sheet No.: D3-A01301EN
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GP1S39J0000F
Fig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature
0.16 Collector-emitter saturation voltage VCE (V) IF=8mA IC=50A 0.14
Fig.8 Collector Dark Current vs. Ambient Temperature
10-6 VCE=20V Collector dark current ICEO (A)
10-7
0.12 0.1 0.08 0.06
10-8
10-9
-25
0
25
50
75
85
10-10 0 25 50 75 Ambient temperature Ta (C) 100
Ambient temperature Ta (C)
Fig.9 Response Time vs. Load Resistance
VCE=5V IC=100mA Ta=25C Response time (ms) 100 td tr
Fig.10 Test Circuit for Response Time
VCC
Input Output 10% 90% td ts tr tf
tf
Input
RD
RL Output
10
ts
1 0.5 1 10 20 Load resistance RL (k)
Fig.11 Detecting Position Characteristics (1) (Output of PT1 and PT2 are 100% at L=0)
100 Relative collector current (%) 90 80 70 60 50 40 30 20 10 0 1 2 3 4 Shield moving distance L (mm)
Sheet No.: D3-A01301EN
-
L=0
+
L
Shield
Parameter PT2 detection width : L1 PT1 detection width : L2 Distance between detection positions : L3
TYP. 0.3 0.3 0.6
Unit mm
PT2
PT1
IF=4mA VCE=5V Ta=25C
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GP1S39J0000F
Fig.12 Detecting Position Characteristics (2) (Output of PT1 and PT2 are 100% at L=0)
Shield
Relative collector current (%)
90 80 70 60 50 40 30 20 10 0 0.5 1 1.5
IF=4mA VCE=5V Ta=25C
L
+ 2 Shield moving distance L (mm)
100
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
- L=0
Sheet No.: D3-A01301EN
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GP1S39J0000F
Design Considerations Design guide
1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 2mm or more from the top of elements. (Example)
2mm or more
2mm or more
This product is not designed against irradiation and incorporates non-coherent IRED.
Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration.
Parts
This product is assembled using the below parts.
* Photodetector (qty. : 2)
Category Phototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 20
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3
* Material
Case Black polyphernylene sulfide resin (UL94 V-0) Lead frame 42Alloy Lead frame plating SnCu plating
Sheet No.: D3-A01301EN
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GP1S39J0000F
Manufacturing Guidelines Soldering Method Flow Soldering:
Soldering should be completed below 260C and within 5 s. Please solder within one time. Soldering area is 1mm or more away from the bottom of housing. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reflow.
Hand soldering
Hand soldering should be completed within 3 s when the point of solder iron is below 350C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature.
Other notice
Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions.
Cleaning instructions Solvent cleaning :
Solvent temperature should be 45C or below. Immersion time should be 3 minutes or less.
Ultrasonic cleaning :
Do not execute ultrasonic cleaning.
Recommended solvent materials :
Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.
Presence of ODC
This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). *Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).
Sheet No.: D3-A01301EN
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GP1S39J0000F
Package specification Sleeve package Package materials
Sleeve : Polystyrene Stopper : Styrene-butadiene
Package method
MAX. 40 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 50 sleeves in one case.
Sheet No.: D3-A01301EN
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GP1S39J0000F
Important Notices
* The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. * Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. * Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). * If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. * This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. * Contact and consult with a SHARP representative if there are any questions about the contents of this publication.
[H138]
Sheet No.: D3-A01301EN
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